Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS)

Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS)[1] is a new measurement procedure for Secondary Ion Mass Spectrometry (SIMS) developed by Paweł Piotr Michałowski, Wawrzyniec Kaszub, Iwona Pasternak and Włodek Strupiński at Institute of Electronic Materials Technology (ITME), Warsaw, Poland. Standard SIMS measurements performed on graphene allowed them to precisely localize any contamination and dopants on a graphene layer[2]. During the experiments they realized that the presence of the graphene layer on a surface of a sample significantly increases the negative ionization probability which in turn enhances the intensity of SIMS signals. For some materials the sensitivity was increased more than three hundred times when compared to a sample without graphene! GESIMS procedure is suitable for analysis of 2D materials (graphene, hexagonal boron nitride, molybdenum disulfide etc.) and ultra-thin films (quantum wells, tunnel junctions, superlattices etc.)

## References

1. ↑ Michałowski, Paweł Piotr; Kaszub, Wawrzyniec; Pasternak, Iwona; Strupiński, Włodek (7 August 2017). "Graphene Enhanced Secondary Ion Mass Spectrometry (GESIMS)" (in En). Scientific Reports 7 (1). doi:10.1038/s41598-017-07984-1. ISSN 2045-2322. Bibcode: 2017NatSR...7.7479M. https://www.nature.com/articles/s41598-017-07984-1.
2. ↑ Michałowski, Paweł Piotr; Kaszub, Wawrzyniec; Merkulov, Alexandre; Strupiński, Włodek (4 July 2016). "Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC". Applied Physics Letters 109 (1): 011904. doi:10.1063/1.4958144. ISSN 0003-6951. Bibcode: 2016ApPhL.109a1904M. http://aip.scitation.org/doi/full/10.1063/1.4958144.

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