Nickel silicide

Ni2Si

Identifiers

CAS Number

* 12059-14-2

3D model (JSmol)

* Interactive image

ChemSpider |

* 21241520

EC Number |

* 235-033-1

PubChem CID

* 14767304

InChI

* InChI=1S/2Ni.Si

Key: RUFLMLWJRZAWLJ-UHFFFAOYSA-N

SMILES

* [Si](=[Ni])=[Ni]

Properties

Chemical formula

| Ni2Si
Density | 7.40 g/cm3[1]
Melting point |  1,255 °C (2,291 °F; 1,528 K)[1]
Structure[2]

Crystal structure

| Orthorhombic, oP12

Space group

| Pnma, No. 62

Lattice constant

a = 0.502 nm, b = 0.374 nm, c = 0.708 nm

Formula units (Z)

| 4

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Infobox references

NiSi

Identifiers

CAS Number

* 12035-57-3

3D model (JSmol)

* Interactive image

ChemSpider |

* 8351596

PubChem CID

* 10176091

InChI

* InChI=1S/Ni.Si

Key: PEUPIGGLJVUNEU-UHFFFAOYSA-N

SMILES

* [Si].[Ni]

Properties

Chemical formula

| NiSi
Molar mass | 86.778 g/mol
Structure[3]

Crystal structure

| Orthorphomic, oP8

Space group

| Pnma, No. 62

Lattice constant

a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm

Formula units (Z)

| 4

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Infobox references

NiSi2

Identifiers

CAS Number

* 12201-89-7

3D model (JSmol)

* Interactive image

PubChem CID

* 138395195

CompTox Dashboard (EPA)

* DTXSID401014290

InChI

* InChI=1S/Ni.2Si

Key: MGTLYUZSHHQPEY-UHFFFAOYSA-N

SMILES

* [Ni].[Si].[Si]

Properties

Chemical formula

| NiSi2
Density | 7.83 g/cm3[1]
Melting point |  993 °C (1,819 °F; 1,266 K)[1]
Structure[4]

Crystal structure

| Cubic, cF12

Space group

| Fm3m, No. 225

Lattice constant

a = 0.5406 nm

Formula units (Z)

| 4

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Infobox references

Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.

## Contents

* 1 Compounds
* 1.1 Properties
* 2 Uses
* 2.1 Microelectronics
* 2.2 Other
* 3 See also
* 4 References
* 5 Further reading

## Compounds

Nickel silicides include Ni3Si, Ni31Si12, Ni2Si, Ni3Si2, NiSi and NiSi2.[5] Ni31Si12, Ni2Si, and NiSi have congruent melting points; the others form via a peritectic transformation.[citation needed] The silicides can be made via fusion or solid state reaction between the elements, diffusion at a junction of the two elements, and other methods including ion beam mixing.[citation needed]

### Properties

Nickel silicides are generally chemically and thermally stable.[citation needed] They have low electrical resistivity; with NiSi 10.5–18 μΩ·cm, Ni2Si 24–30 μΩ·cm, NiSi2 34–50 μΩ·cm; nickel-rich silicides have higher resistivity rising to 90–150 μΩ·cm in Ni31Si12.[citation needed]

## Uses

### Microelectronics

Nickel silicides are important in microelectronic devices – specific silicides are good conductors, with NiSi having a conductivity approaching that of elemental nickel.[citation needed] With silicon carbide as the semiconductor nickel reacts at elevated temperatures to form nickel silicides and carbon.[citation needed]

### Other

Nickel silicides have potential as coatings for nickel-based superalloys and stainless steel, due to their corrosion, oxidation, and wear resistance.[citation needed] NiSi has been investigated as a hydrogenation catalyst for unsaturated hydrocarbons.[6] Nickel silicide nanoparticles supported on silica support have been suggested as an alternative catalyst to widely used pyrophoric Raney nickel.[7]

## See also

* J. Marvin Herndon, who promoted a theory that the Earth's core is nickel silicide
* Titanium disilicide, also used in microelectronics
* Salicide, self-aligned silicides

## References

1. ↑ 1.0 1.1 1.2 1.3 Cite error: Invalid `<ref>` tag; no text was provided for refs named `crc`
2. ↑ El Boragy M., Rajasekharan T.P., Schubert K. (1982). Z. Metallkd., 73, 193–197
3. ↑ Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
4. ↑ Beck, U.; Neumann, H.-G.; Becherer, G. (1973). "Phasenbildung in Ni/Si-Schichten". Kristall und Technik 8 (10): 1125–1129. doi:10.1002/crat.19730081005.
5. ↑ Dahal, Ashutosh; Gunasekera, Jagath; Harringer, Leland; Singh, Deepak K.; Singh, David J. (July 2016), "Metallic nickel silicides: Experiments and theory for NiSi and first principles calculations for other phases", Journal of Alloys and Compounds 672: 110–116, doi:10.1016/j.jallcom.2016.02.133, https://ws680.nist.gov/publication/get_pdf.cfm?pub_id=920134
6. ↑ Itahara, Hiroshi; Simanullang, Wiyanti F.; Takahashi, Naoko; Kosaka, Satoru; Furukawa, Shinya (2019), "Na-Melt Synthesis of Fine Ni3Si Powders as a Hydrogenation Catalyst", Inorganic Chemistry 58 (9): 5406–5409, doi:10.1021/acs.inorgchem.9b00521, PMID 30983337, https://figshare.com/articles/Na-Melt_Synthesis_of_Fine_Ni_sub_3_sub_Si_Powders_as_a_Hydrogenation_Catalyst/7993316
7. ↑ P. Ryabchuk, G. Agostini, M.-M. Pohl, H. Lund, A. Agapova, H. Junge, K. Junge and M. Beller, Sci. Adv., 2018, 4, eaat0761 https://doi.org/10.1126/sciadv.aat0761

## Further reading

* Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (Nov 2003), "Towards implementation of a nickel silicide process for CMOS technologies", Microelectronic Engineering 70 (2–4): 144–157, doi:10.1016/S0167-9317(03)00380-0

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*[CID]: Compound ID
*[EPA]: U.S. Environmental Protection Agency