Aluminium indium antimonide

Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. The alloy can contain any ratio between aluminium and indium; that is, x in the formula can continuously take on any value between 0 and 1. AlInSb refers generally to any composition of the alloy.

The bandgap and lattice constant of AlInSb alloys are between those of pure AlSb (a = 0.614 nm, Eg = 1.62 eV) and InSb (a = 0.648 nm, Eg = 0.17 eV).[1] At an intermediate composition (approximately x = 0.73), the bandgap transitions from an indirect gap, like that of pure AlSb, to a direct gap, like that of pure InSb.[2]

## Preparation[edit]

AlInSb films have been grown by molecular beam epitaxy and metalorganic chemical vapor deposition[3] on gallium arsenide and gallium antimonide substrates. It is typically incorporated into layered heterostructures with other III-V compounds.

## Applications[edit]

AlInSb has been employed as a barrier material and dislocation filter for InSb quantum wells and in InSb-based devices.[4]

AlInSb has been used as the active region of LEDs and photodiodes to generate and detect light at mid-infrared wavelengths. These devices can be optimized for performance around 3.3 μm, a wavelength of interest for methane gas sensing.[5][6]

## References[edit]

1. ^ Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
2. ^ Fares, N. E.-H., Bouarissa, N. (2015). "Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys". Infrared Physics & Technology. 71: 396–401. doi:10.1016/j.infrared.2015.05.011.
3. ^ Biefeld, R. M., Allerman, A. A., Baucom, K. C. (1998). "The growth of AlInSb by metalorganic chemical vapor deposition". Journal of Electronic Materials. 27 (6): L43–L46. Bibcode:1998JEMat..27L..43B. doi:10.1007/s11664-998-0060-0. S2CID 93622617.
4. ^ Mishima, T. D., Edirisooriya, M., Goel, N., Santos, M. B. (2006). "Dislocation filtering by AlxIn1−xSb∕AlyIn1−ySb interfaces for InSb-based devices grown on GaAs (001) substrates". Applied Physics Letters. 88 (19): 191908. doi:10.1063/1.2203223.
5. ^ Fujita, H., Nakayama, M., Morohara, O., Geka, H., Sakurai, Y., Nakao, T., Yamauchi, T., Suzuki, M., Shibata, Y., Kuze, N. (2019). "Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates". Journal of Applied Physics. 126 (13): 134501. Bibcode:2019JAP...126m4501F. doi:10.1063/1.5111933. S2CID 209991962.
6. ^ Morohara, O., Geka, H., Fujita, H., Ueno, K., Yasuda, D., Sakurai, Y., Shibata, Y., Kuze, N. (2019). "High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors". Journal of Crystal Growth. 518: 14–17. Bibcode:2019JCrGr.518...14M. doi:10.1016/j.jcrysgro.2019.02.049. S2CID 104467465.

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Aluminium compounds

Al(I)|

* AlBr
* AlCl
* AlF
* AlI
* Al2O
* AlOH

| Organoaluminium(I) compounds|

Al(C5(CH3)5)

|

Al(II)|

* AlB2
* AlB12
* AlO

Al(III)|

* AlAs
* Al(BH4)3
* AlBr3
* Al(CN)3
* AlCl3
* AlF3
* AlH3
* AlI3
* AlN
* Al(NO3)3
* Al2(CO3)3
* Al(OH)3
* Al(OH)2OAc
* Al(OH)(OAc)2
* Al(OAc)3
* Al2SO4(OAc)4
* AlP
* AlPO4
* AlSb
* Al(C5H7O2)3
* Al(MnO4)3
* Al2(MoO4)3
* Al2O3
* Al2S3
* Al2(SO4)3
* Al2Se3
* Al2Te3
* Al2SiO5
* AlAsO4
* Al4C3
* AlOHO
* Al(OH)2CO2C17H5
* NaAlH2(OC2H4OCH3)2
* LiAlH2(OC2H4OCH3)2
* K2Al2B2O7

| Alums|

* (NH4)Al(SO4)2
* KAl(SO4)2
* NaAl(SO4)2

|

Organoaluminium(III) compounds|

* Al(C3H5O3)3
* C
36H
69AlO

* (Al(CH3)3)2
* (Al(C2H5)3)2
* Al(CH2CH(CH3)2)3
* Al(C2H5)2Cl
* Al(C2H5)2CN
* Al(CH2CH(CH3)2)2H
* Al(C2H5)2Cl2C2H5Cl
* Ti(C5H5)2CH2ClAl(CH3)2

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Indium compounds

Indium(I)|

* InBr
* InCl
* In2SO4

| Organoindium(I) compounds|

* [In(C5H5)]

|

Indium(I,III)|

* InSe

Indium(III)|

* InN
* InP
* InAs
* InSb
* InF3
* InCl3
* InBr3
* InI3
* InH3
* In(OH)3
* In2O3
* In(ClO

* In2S3
* In2Se3
* In2Te3
* In2(SO4)3
* In(NO3)3
* InxGa1−xN

| Organoindium(III) compounds|

* In(CH3COO)3
* In(C5H7O2)3
* In(C2H5)3
* In(CH3)3

|

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Antimony compounds

Antimonides|

* AlSb
* Bi1-xSbx
* GaSb
* InSb
* PrSb
* YSb
* ZnSb

Sb(III)|

* SbBr3
* Sb(C2H3O2)3
* SbCl3
* SbF3
* Sb4O4(OH)2(NO3)2
* SbH3
* SbI3
* SbN3
* Sb2O3
* Sb2S3
* Sb2(SO4)3
* Sb2Se3
* Sb2Te3

| Organoantimony(III) compounds|

* Sb(CH3)3
* Sb(C6H5)3

|

Sb(III,V)|

* Sb2O4

Sb(V)|

* SbCl5
* SbF5
* Sb2O5
* Sb2S5

| Organoantimony(V) compounds|

* Sb(CH3)5
* Sb(C6H5)5

|

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