Hafnium disulfide

Names
IUPAC name

Hafnium disulfide

Identifiers

CAS Number

* 18855-94-2 Y

3D model (JSmol)

* Interactive image

ChemSpider |

* 8374205 Y

ECHA InfoCard | 100.038.738

PubChem CID

* 101811522

InChI

* InChI=1S/Hf.2S Y

SMILES

* S=[Hf]=S

Properties

Chemical formula

| HfS2
Molar mass | 246.62 g/mol[1]
Appearance  | Brown solid
Density | 6.03 g/cm3[1]
Band gap | ~1.8 eV (indirect)[2]
Structure

Crystal structure

| hP3, P3m1, No 164[3]

Lattice constant

a = 0.363 nm, c = 0.584 nm

Formula units (Z)

| 1
Related compounds

Other anions

| Hafnium dioxide

Other cations

| Tungsten disulfide
Molybdenum disulfide

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

N verify (what is YN ?)

Infobox references

Chemical compound

Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor.[4] High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes.[5] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.[6]

## References[edit]

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1. ^ a b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.66. ISBN 1-4398-5511-0.
2. ^ Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS2 and HfS2". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.
3. ^ Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S2−xTex)1-y and Hf(Se2−xTex)1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.
4. ^ Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS2 transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC 4772098. PMID 26926098.
5. ^ Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv:1611.00895. doi:10.1007/s12274-017-1636-x. S2CID 99414438.
6. ^ Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID 95277086.

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* t
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Hafnium compounds

Hf(II)|

* HfB2

Hf(III)|

* HfI3

Hf(IV)|

* HfC
* HfBr4
* HfCl4
* HfF4
* HfI4
* Hf(C5H7O2)4
* Hf(OSO2CF3)4
* HfO2
* Hf(NO3)4
* HfSiO4
* HfS2
* La2Hf2O7
* Ta4HfC5
* CHf2N

* v
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* e

Sulfides (S2−)

| H2S |  |  |  | He

|
|
|
|

Li2S | BeS | B2S3
+BO3 | CS2
COS | (NH4)SH | O  | F  | Ne
Na2S | MgS | Al2S3 | SiS
SiS2
-Si | PxSy
-P | -S2−
2 | Cl  | Ar
K2S | CaS |  | ScS
Sc2S3 | TiS
TiS2
Ti2S3 | VS
VS2
V2S3 | CrS
Cr2S3 | MnS
MnS2 | FeS
Fe3S4 | CoS | NiS | Cu2S
CuS | ZnS | GaS
Ga2S3 | GeS
GeS2
-Ge | As2S3
As4S3
-As | SeS2
+Se | Br  | Kr
Rb2S | SrS |  | Y2S3 | ZrS2 | NbS2 | MoS2 | Tc  | Ru  | Rh2S3 | PdS | Ag2S | CdS | In2S3 | SnS
SnS2
-Sn | Sb2S3
Sb2S5
-Sb | TeS2 | I  | Xe
Cs2S | BaS | *  | LuS
Lu2S3 | HfS2 | TaS2 | WS2
WS3 | ReS2
Re2S7 | OsS
4 | Ir2S3
IrS2 | PtS
PtS2 | Au2S
Au2S3 | HgS | Tl2S | PbS
PbS2 | Bi2S3 | PoS | At  | Rn
Fr  | Ra  | **  | Lr  | Rf  | Db  | Sg  | Bh  | Hs  | Mt  | Ds  | Rg  | Cn  | Nh  | Fl  | Mc  | Lv  | Ts  | Og

*  | LaS
La2S3 | CeS
Ce2S3 | PrS
Pr2S3 | NdS
Nd2S3 | Pm2S3 | SmS
Sm2S3 | EuS
Eu2S3 | GdS
Gd2S3 | TbS
Tb2S3 | DyS
Dy2S3 | HoS
Ho2S3 | ErS
Er2S3 | TmS
Tm2S3 | YbS
Yb2S3
**  | Ac2S3 | ThS2 | Pa  | US
US2 | Np  | Pu  | Am  | Cm  | Bk  | Cf  | Es  | Fm  | Md  | No
*[CID]: Compound ID
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