Electron Beam Lithography

Electron trajectories in resist: An incident electron (red) produces secondary electrons (blue). Sometimes, the incident electron may itself be backscattered as shown here and leave the surface of the resist (amber).

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Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing).[1] The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.[1]

## Resources

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### Wikipedia readings

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* Wikipedia: Electron-beam lithography

## See Also

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* Electric VLSI Design System

## References

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1. ↑ Wikipedia: Electron-beam lithography