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| Names | |
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| Other names
Neodymium(III) nickelate
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| Identifiers | |
3D model (JSmol)
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PubChem CID
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| Properties | |
| NdNiO3 | |
| Molar mass | 250.932 g·mol−1 |
| Hazards | |
| GHS pictograms | |
| GHS Signal word | Danger |
| H317, H350, H372 | |
| P261, P280, P263, P405, P501 | |
| Related compounds | |
Other anions
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Neodymium(III) oxide Neodymium(III) acetate Neodymium(III) hydride |
Other cations
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europium nickelate lanthanum nickelate |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
| Infobox references | |
Neodymium nickelate can be prepared by dissolving neodymium(III) oxide and nickel(II) oxide in nitric acid, followed by heating the mixture in an oxygen atmosphere.[2]
It can also be prepared by pyrolyzing a mixture of nickel nitrate and neodymium nitrate.[2][3]
It decomposes in high temperature (950 °C) by nitrogen:[2]
It can also be reduced to the monovalent nickel compound NdNiO2 by sodium hydride at 160 °C.[4]
Neodymium nickelate shows metal-insulator transition (MIT) under low temperature.[5][6] The temperature at which it transforms (TMIT) is 200K,[7] which is higher than praseodymium nickelate (130K) but lower than samarium nickelate (400K).[5][7][8] It transforms from antiferromagnetism to paramagnetism. It has demonstrated to be a first-order phase transition (this applies for praseodymium nickelate as well).[5] The temperature (TN) can be changed by varying the NiO6 octahedral distortion.[5][6] It is the only lathanide nickelate to have the same TMIT as TN.[5]
In a 2010 study, it was found that neodymium nickelate as an anode material provided 1.7 times the current density of typical LSM anodes when integrated into a commercial SOEC and operated at 700 °C, and approximately 4 times the current density when operated at 800 °C. The increased performance is postulated to be due to higher "overstoichiometry" of oxygen in the neodymium nickelate, making it a successful conductor of both ions and electrons.[9]
Neodymium nickelate can also be used in electrocatalysts, synapse transistors, photovoltaics, memory resistors, biosensors, and electric-field sensors.[5]